中山大学理工学院导师介绍：刘扬

姓名：刘扬 性别：男 出生年月：1969年8月

职称：教授 学院：理工学院 最后学历：博士

主要研究方向：宽禁带III-V族氮化物半导体材料与器件

教学科研情况

1991年、1994年和2000年于吉林大学电子科学与工程学院微电子学和固体电子学专业分别获得学士、硕士和博士学位。主要从事宽谱高功率1.55微米量子阱InGaAsP/InP集成超辐射光源的研制的研究工作。

1994年9月至2001年10月，吉林大学通信工程学院，助教、讲师。从事光通信教学和科研工作。

2001年11月至2007年4月在日本名古屋工业大学纳米器件与系统研究中心访问研究，主要从事GaN基材料的MOCVD法生长以及它在发光器件和电子器件方面的应用研究。

2007年5月至今，中山大学，教授。

教学课程: 《半导体物理》《半导体光电器件》

承担课题

中山大学百人计划引进人才研究项目

中山大学后备重点课题项目

发表论文

1.Y. Liu, T. Egawa, and H. Jiang “Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate” Electronics Letters, Vol.42, pp.884 (2006.07)

2.Yang Liu, Takashi Egawa, Hao Jiang, Baijun Zhang and Hiroyasu Ishikawa “Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate” Japanese Journal of Applied Physics, Vol.45, pp.5728 (2006.07)

3.Y. Liu, H. Jiang, T. Egawa, B. Zhang, and H. Ishikawa “Al composition dependent properties of quaternary AlInGaN Schottky diodes” Journal of Applied Physics, Vol. 99, pp.123702 (2006.06)

4.H. Jiang, T. Egawa, M. Hao, Y. Liu “Reduction of threading dislocations in AlGaN layers grown on AlN/sapphire templates using high-temperature GaN interlayer”, Applied Physics Letters, Vol. 87, pp.241911 (2005.12)

5.Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang and H. Ishikawa “Demonstration of undoped quaternary AlInGaN/GaN heterostructure field-effect transistor”, Applied Physics Letters, Vol.86, pp.223510 (2005.05).

6.Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, and Takashi Jimbo “Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off”, Applied Physics Letters, Vol. 86, No.7, pp.071113 (2005.02).

7.Y. Liu, T. Egawa, H. Jiang, B. Zhang, H. Ishikawa and M. Hao “Near ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN”, Applied Physics Letters, Vol. 85, No.24, pp.6030-6032, (2004.12).

8.Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Baijun Zhang and Maosheng Hao “Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition”, Japanese Journal of Applied Physics, Vol.43 No.5A, pp.2414-2418, (2004.05).

9.Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu and Takashi Jimbo “Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template”, Journal of Applied Physics, Vol.95, No.6, pp.3170-3174, (2004.03).

10.Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Hao Jiang, Baijun Zhang, Maosheng Hao and Takashi Jimbo “High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission”, Journal of Crystal Growth, Vol. 264, Issue 1-3, pp.159-164, (2004.03).

11.Yang Liu, Takashi Egawa, Hiroyasu Ishikawa and Takashi Jimbo “Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire”, Journal of Crystal Growth, Vol. 259, Issue 3, pp.245-251, (2003.12).

12.Baijun Zhang, Takashi Egawa, Yang Liu, Hiroyasu Ishikawa and Takashi Jimbo “InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition”, physica status solidi (c), Vol.0 , Issue 7, pp.2244-2247, (2003.11).

13.Yang Liu, Takashi Egawa, Hiroyasu Ishikawa and Takashi Jimbo “High-quality quaternary AlInGaN epilayers on sapphire”, Physica Status Solidi (a), Vol.200, Issue 1, pp.36-39, (2003. 10).

14.Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu and Takashi Jimbo “High-Bright InGaN Multiple-Quantum-well Blue Light-Emitting Diodes on Si(111) Using AlN/GaN Mutilayers with a Thin AlN/AlGaN Buffer Layer”, Japanese Journal of Applied Physics, Vol. 42, No. 3A, pp. L 226–L 228, (2003.03).

15.Guotong Du, Chengdong Xu, Yang Liu, Yongsheng Zhao and Haisong Wang “High-Power Integrated Superluminescent Light Source”, IEEE Journal of Quantum Electronics , VOL. 39, No. 1, pp.149-153, (2003.01).

16.Yang Liu, Junfeng Song, Yuping Zeng, Bin Wu, Yuantao Zhang, Ying Qian, Yingzhi Sun and Guotong Du “High power 1.5m integrated superluminescent light source with tilted ridge waveguide”, Optical and Quantum Electronics, Vol.33, No.12, pp.1233-1239, (2001.12).

17.Yang Liu, Junfeng Song, Yuping Zeng, Bin Wu, Yuantao Zhang, Ying Qian, Yingzhi Sun and Guotong Du “High Power 1.5m InGaAsP/InP Integrated Superluminescent Light Source”, Chinese Physics Letters, Vol.18, No.8, pp.1074-1077, (2001.08).

18.Yang Liu, Junfeng Song, Yuping Zeng, Bin Wu, Yuantao Zhang, Ying Qian, Yingzhi Sun and Guotong Du “High Power 1.5m InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure”, Japanese Journal of Applied Physics, Vol.40, Pt1, No.6A, pp.4009-4010, (2001.06).

19.Yang Liu, Kun Liu, Junfeng Song, Yuchun Chang, Bonan Kang, Jingzhi Yin and Guotong Du “1.3m Integrated superluminescent light source”, Optical Materials, Vol.14, Issue 3, pp235-238, (2000.07).

20.Junfeng Song, Yanping Fu, Yang Liu, Yuchun Chang, Bonan Kang, Jiangzhi Yin, Xuemei Li and Guotong Du “Analysis of characteristics of vertical cavity surface-emitting lasers with a modified rate equation”, Optical Materials, Vol.14, Issue 3, pp217-221, (2000.07).

21.Yongsheng Zhao, Weihua Han, Junfeng Song, Xuemei Li, Yang Liu, Dingsan Gao and Guotong Du “Spontaneous Emission Factor for Semiconductor Superluminescent Diodes”, Journal of Applied Physics, Vol.85, No.8, pp.3945-3948, (1999.04).

获奖情况

1999年参与完成的项目“AlGaAs超辐射发光管”，获得国家教育部颁发的科技进步三等奖。

2002-2004年日本学术振兴会(JSPS) Research Fellowship