姓 名：李常青 性 别：男 职 称：副教授
电 话：0371-67781541 电子邮件：iecqli@zzu.edu.cn
所在专业：电子信息 通信地址：郑州大学信息工程学院
1986年西安交通大学 真空电子器件专业毕业 工学学士
2000年 筑波大学 工学研究科 智能机能材料 工学硕士
2003年 筑波大学 工学研究科 智能机能材料 工学博士
科研课题
主持完成国家自然科学基金一项，2007-2009；
获教育部留学回国人员资助一项，2005-2006；
实验室现有纳米硅材料制作装置，光谱分析及检测系统等平台。
主要论文
1. N. Fukata, C.Q.Li, T. Mukimura and K. Murakami; “Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation”, Appl. Phy. A,84 (2006) 395-401. SCI/EI
2. N. Fukata, C.Q.Li, T. Mukimura and K. Murakami; “Hydrogen Passivation of Er Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation”, MRS Symp. Pro, Grop-IVSemi Nanostructions, V832, (2005) 379-383. EI
3. T. Makimura, K. Kondo, C.Q.Li and K. Murakami; “Excitation of Er atoms by energy transfer from Si nanocrystallites embedded in SiO2 matrices fabricated by laser ablation”, Appl. Phys. A. 79 (2004) 799-802. SCI/EI
4. T. Makimura, K. Kondo, C.Q.Li and K. Murakami; “Optical excitation of Er ions with 1.5μm luminescence via the luminescent state in Si nanocrystallites embedded in SiO2 matrices”, Appl. Phys. Lett. 83 (2003) 5422-5424. SCI/EI
5. C.Q.Li, K. Kondo, T. Makimura and K. Murakami “Increase of 1.5μm luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO2 Films with Si Nanocrystallites Fabricated by Laser Ablation”, Jpn. J. Appl. Phys. Part A 6 (2003) 3424-3428. SCI/EI
6. C.Q.Li, K. Kondo, T. Makimura and K. Murakami “Fabrication of Er-doped Si nanocrystallites without Thermal Quenching of 1.5μm Photoluminescence”, Appl. Surf. Sci. 197-198 (2002) 607-609. SCI/EI
7. K. Murakami， C.Q.Li, K. Kondo andT. Makimura; "Er and P Impurity Doping in Si nanostructures Fabricated by laser Ablation", Proceedings of SPIE vol. 4636 (2002) 67-72. EI
8. K. Kondo, Y. Yamamoto, T. Mizuta, C.Q.Li, T. Makimura and K. Murakami "Phosphorus-doped Si nanocrystallites embedded in SiO2 films", Appl. Surf. Sci. 197-198 (2002) 670-673. SCI/EI
9. T. Makimura, C. Li, T. Mizuta and K. Murakami, “Fabrication of Materials from Ablation Plasma”, J. Plasma & Fusion Research 76 (2000) 1139-1144. (in Japanese).
国际会议：
1. C. Li, H. Uematsu, K. Kondo, T. Makimura and T. Makimura, “Excitation of Er Atoms by Energy transfer from Si Nanoparticles Embedded in SiO2 Matrices Fabricated by Laser Ablation”, The 7th International Conference on Laser Ablation (Hersonissos, Greece, 2003) PS59.
2. C. Li, T. Makimura, T. Shima, Y. Makita and K. Murakami, “1.5μm PL of Er-doped Silicon Nanoparticles Fabricated by Laser Ablation”, The 3rd NIMC International Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2000) pp. 152-153.
3. C. Li, K. Kondo, Y. Kawaguchi, T. Makimura and K. Murakami, “1.5μm Photoluminescence of Er-doped Silicon Nanocrystallites Fabricated by Laser Ablation”, The 4th NIMC International Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2001) pp. 260-261.
4. C. Li, K. Kondo, T. Makimura and K. Murakami, “Er-doped Si nanocrystallites without Thermal Quenching of 1.5μm Photoluminescence”, The 6th International Conference on Laser Ablation (Tsukuba, Japan, 2001) p. 126.
5. C. Li, K. Kondo, Y. Kawaguchi, T. Makimura and K. Murakami, “Bandgap Effect to Thermal Quenching of Photoluminescence at 1.5μm from Er-doped Si Nanocrystallites in SiO2 Matrices”, The 5th AIST International Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2002) pp. 194-195.
6. C. Li, K. Kondo, T. Makimura and K. Murakami, “Er-doped Si Nanocrystallites without Thermal Quenching of 1.5μm Photoluminescence”, International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations (Tokyo, Japan, 2002) pp. 94-95.
7. K. Kondo, C. Li, T. Makimura and K. Murakami, “Fabrication of Er-doped Si nanocrystallites in SiO2 Matrices without Thermal Quenching of 1.5μ m PL”, The 5th AISTInternational Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2002) pp.196-197